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| NTE268 (NPN) & NTE269 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential requirement, low power lamp and relay drivers and power drivers for high-current applications such as voltage regulators. Features: D Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 1.5A D TO202 Type Package: 2W Free Air Dissipation @ TA = +25C Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13V Colllector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67W Derate Above 25C (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/C Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75C/W Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5C/W Note 1. The NTE268 is a discontinued device and no longer available. Note 2. Pulse Width 25ms, Duty Cycle 50%. Note 3. The actual power dissipation capability of the TO202 type package is 2W @ TA = +25C. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector Cutoff Current V(BR)CEO IC = 10mA, Note 4 ICBO ICES Emitter Cutoff Current ON Characteristics (Note 4) DC Current Gain hFE VCE(sat) VBE(sat) Ccb IC = 200mA, VCE = 5V IC = 1.5A, VCE = 5V Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Dynamic Characteristics Collector Capacitance NTE268 NTE269 High Frequency Current Gain |hfe| IC = 20mA, VCE = 5V, f = 100MHz VCB = 10V, IE = 0, f = 1MHz - - 1.0 - - - 10 25 - pF pF IC = 1.5A, IB = 3mA IC = 1.5A, IB = 3mA 10000 1000 - - - - - - - - 1.5 2.5 V V IEBO VCB = 50V, IE = 0, TJ = +150C VCE = 50V, VBE = 0 VEB = 13V, IC = 0 50 - - - - - - - - 20 0.5 100 V A A nA Symbol Test Conditions Min Typ Max Unit Note 4. Pulse Test: Pulse Width 300s, Duty Cycle 2%. NTE268 C B .380 (9.56) C .180 (4.57) .132 (3.35) Dia E 1.200 (30.48) Ref .500 (12.7) .325 (9.52) .300 (7.62) .070 (1.78) x 45 Chamf .050 (1.27) NTE269 C B .400 (10.16) Min E B C E .100 (2.54) .100 (2.54) |
Price & Availability of NTE269
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